Publications

A full list of my publications is available on my Google Scholar profile

Thesis

1. R. P. Martinez, “Advancing mm-Wave GaN Technology Through Innovative Modeling Approaches,” Ph.D. Thesis, Stanford University, 2024.

Selected Journal and Conference Papers

1. R. P. Martinez, S. Boyd, and S. Chowdhury, “Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications,” IEEE Access, vol. 13, pp. 34105-34114, 2025, doi: 10.1109/ACCESS.2025.3543787.

2. R. P. Martinez, M. Iwamoto, K. Woo, Z. Bian, R. Tinti, S. Boyd, and S. Chowdhury, “Compact Model Parameter Extraction via Derivative-Free Optimization,” IEEE Access, vol. 12, pp. 123224-123235, Sep. 2024, doi: 10.1109/ACCESS.2024.3453198.

3. R. P. Martinez, M. Iwamoto, A. B. Morgado, Y. Li, R. Tinti, J. Xu, C. Gillease, S. Cochran, B. Shankar, E. Schmidt, Z. Song, N. Wagner, P. Pahl, A. Petr, and S. Chowdhury, “A Hybrid Physical ASM-HEMT Model Using a Neural Network-Based Methodology,” in Proc. IEEE BiCMOS Compound Semicond. Integr. Circuits Technol. Symp., Oct. 2024, pp. 38-41, doi: 10.1109/BCICTS59662.2024.10745660.

4. R. P. Martinez, M. Iwamoto, J. Xu, C. Gillease, S. Cochran, M. Culver, A. Cognata, N. Wagner, P. Pahl, and S. Chowdhury, “Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs,” IEEE Trans. Microw. Theory Techn., vol. 72, no. 5, pp. 2692-2703, May 2024, doi:10.1109/TMTT.2023.3349172.

5. K. Woo, Z. Bian, M. Noshin, and R. P. Martinez, M. Malakoutian, B. Shankar, S. Chowdhury, “From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices,” J. Phys.: Mater, vol. 7, no. 2, pp. 022003, Mar. 2024, doi:10.10882515-7639ad218b.

6. H. Lu, M. Zhang, L. Yang, B. Hou, R. P. Martinez, M. Mi, J. Du, L. Deng, M. Wu, S. Chowdhury, X. Ma, Y. Hao, “A Review of GaN RF Devices and Power Amplifiers for 5G Communication Applications,” Fundam. Res., Nov. 2023, doi:10.1016/j.fmre.2023.11.005.

7. R. P. Martinez, M. Iwamoto, J. Xu, P. Pahl, and S. Chowdhury, “Benchmarking Measurement-Based Large-Signal FET Models for GaN HEMT Devices,” Proc. IEEE Radio Freq. Integr. Circuits Symp. (RFIC), San Diego, CA, USA, pp. 1-4, 2023 , https://doi.org/10.1109/RFIC54547.2023.10186170doi:10.1109/RFIC54547.2023.10186170.

8. R. P. Martinez, D. J. Munzer, B. Shankar, B. Murmann, and S. Chowdhury, “Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective,” IEEE Trans. Electron Devices, vol. 70, no. 5, pp. 2247-2254, May 2023, doi:10.1109/TED.2023.3259383.